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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER VCBO INC Collector-base voltage E SEM ANG H 2SC2591 2SC2592 2SC2591 2SC2592 OND IC CONDITIONS TOR UC VALUE 150 V 180 150 UNIT Open emitter VCEO Collector-emitter voltage Open base 180 Open collector 5 1 1.5 TC=25ae 20 150 -55~150 ae ae V VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SC2591 IC=0.1mA ,IB=0 2SC2592 VEBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IE=10|I A ,IC=0 CONDITIONS 2SC2591 2SC2592 SYMBOL MIN 150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 180 5 0.5 1.0 2.0 2.0 1 1 90 330 |I |I V V V A A IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=120V; IE=0 VEB=4V; IC=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V R Output capacitance S 185-330 Transition frequency hFE-1 Classifications Q 90-155 INC E SEM ANG H IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCE=10V OND IC 50 TOR UC 20 200 pF MHz 130-220 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2591 2SC2592 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 CHA IN E SEM NG OND IC TOR UC 4 |
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